High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

Meng Zhang, Animesh Banerjee, Pallab Bhattacharya

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.
Original languageEnglish (US)
Pages (from-to)470-472
Number of pages3
JournalJournal of Crystal Growth
Volume323
Issue number1
DOIs
StatePublished - May 2011
Externally publishedYes

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