High performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region

Mohammed Zahed Mustafa Khan, Mohammed Abdul Majid, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The demonstration of high power, ultra-low ripple superluminescent diode using multiple quantum-dash-in-a-well layers with variable barrier thickness is reported. The device exhibits >20 mW power, < 0.3dB ripple, and > 80 nm 3dB bandwidth at ~1.55 μm.
Original languageEnglish (US)
Title of host publication2013 IEEE Photonics Conference
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages95-96
Number of pages2
ISBN (Print)978-1-4577-1506-8
DOIs
StatePublished - Nov 11 2013

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