High performance pMOSFETs using Si/Si 1-x Ge x /Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node

S. Suthram*, P. Majhi, G. Sun, P. Kalra, H. R. Harris, K. J. Choi, D. Heh, J. Oh, D. Kelly, R. Choi, B. J. Cho, Muhammad Mustafa Hussain, C. Smith, S. Banerjee, W. Tsai, S. E. Thompson, H. H. Tseng, R. Jammy

*Corresponding author for this work

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