High performance n -channel organic field-effect transistors and ring oscillators based on C 60 fullerene films

Thomas Anthopoulos*, Birendra Singh, Nenad Marjanovic, Niyazi S. Sariciftci, Alberto Montaigne Ramil, Helmut Sitter, Michael Cölle, Dago M. De Leeuw

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

212 Scopus citations

Abstract

We report on organic n -channel field-effect transistors and circuits based on C60 films grown by hot wall epitaxy. Electron mobility is found to be dependent strongly on the substrate temperature during film growth and on the type of the gate dielectric employed. Top-contact transistors employing LiFAl electrodes and a polymer dielectric exhibit maximum electron mobility of 6 cm2 V s. When the same films are employed in bottom-contact transistors, using Si O2 as gate dielectric, mobility is reduced to 0.2 cm2 V s. By integrating several transistors we are able to fabricate high performance unipolar (n -channel) ring oscillators with stage delay of 2.3 μs.

Original languageEnglish (US)
Article number213504
JournalApplied Physics Letters
Volume89
Issue number21
DOIs
StatePublished - Dec 15 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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