High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

Pradipta K. Nayak, Mohamed N. Hedhili, Dong Kyu Cha, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

132 Scopus citations

Abstract

We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.
Original languageEnglish (US)
Pages (from-to)033518
JournalApplied Physics Letters
Volume103
Issue number3
DOIs
StatePublished - Jul 18 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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