High performance flexible CMOS SOI FinFETs

Hossain M. Fahad, Galo T. Sevilla, Mohamed T. Ghoneim, Muhammad Mustafa Hussain

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today's traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world's highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.
Original languageEnglish (US)
Title of host publication72nd Device Research Conference
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages231-232
Number of pages2
ISBN (Print)9781479954056
DOIs
StatePublished - Jun 2014

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