High-performance ambipolar diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities

Zhuoying Chen, Mi Jung Lee, Raja Ashraf, Yun Gu, Sebastian Albert-Seifried, Martin Meedom Nielsen, Bob Schroeder, Thomas Anthopoulos, Martin Heeney, Iain Mcculloch, Henning Sirringhaus*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

479 Scopus citations

Abstract

Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm 2 V -1 s -1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.

Original languageEnglish (US)
Pages (from-to)647-652
Number of pages6
JournalAdvanced Materials
Volume24
Issue number5
DOIs
StatePublished - Feb 2 2012

Keywords

  • ambipolar devices
  • ambipolar transport
  • field-effect transistors
  • polymers
  • solution processing

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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