TY - JOUR
T1 - High-performance ambipolar diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities
AU - Chen, Zhuoying
AU - Lee, Mi Jung
AU - Ashraf, Raja
AU - Gu, Yun
AU - Albert-Seifried, Sebastian
AU - Meedom Nielsen, Martin
AU - Schroeder, Bob
AU - Anthopoulos, Thomas
AU - Heeney, Martin
AU - Mcculloch, Iain
AU - Sirringhaus, Henning
PY - 2012/2/2
Y1 - 2012/2/2
N2 - Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm 2 V -1 s -1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.
AB - Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm 2 V -1 s -1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.
KW - ambipolar devices
KW - ambipolar transport
KW - field-effect transistors
KW - polymers
KW - solution processing
UR - http://www.scopus.com/inward/record.url?scp=84863012840&partnerID=8YFLogxK
U2 - 10.1002/adma.201102786
DO - 10.1002/adma.201102786
M3 - Article
C2 - 21997483
AN - SCOPUS:84863012840
VL - 24
SP - 647
EP - 652
JO - Advanced materials (Deerfield Beach, Fla.)
JF - Advanced materials (Deerfield Beach, Fla.)
SN - 0935-9648
IS - 5
ER -