High-performance ambipolar diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities

Zhuoying Chen; Mi Jung Lee; Raja Ashraf; Yun Gu; Sebastian Albert-Seifried; Martin Meedom Nielsen; Bob Schroeder; Thomas Anthopoulos; Martin Heeney; Iain Mcculloch; Henning Sirringhaus

doi:10.1002/adma.201102786

High-performance ambipolar diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities

Zhuoying Chen, Mi Jung Lee, Raja Ashraf, Yun Gu, Sebastian Albert-Seifried, Martin Meedom Nielsen, Bob Schroeder, Thomas Anthopoulos, Martin Heeney, Iain Mcculloch, Henning Sirringhaus^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

479 Scopus citations

Abstract

Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm ² V ^-1 s ^-1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.

Original language	English (US)
Pages (from-to)	647-652
Number of pages	6
Journal	Advanced Materials
Volume	24
Issue number	5
DOIs	https://doi.org/10.1002/adma.201102786
State	Published - Feb 2 2012

Keywords

ambipolar devices
ambipolar transport
field-effect transistors
polymers
solution processing

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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Chen, Z., Lee, M. J., Ashraf, R., Gu, Y., Albert-Seifried, S., Meedom Nielsen, M., Schroeder, B., Anthopoulos, T., Heeney, M., Mcculloch, I., & Sirringhaus, H. (2012). High-performance ambipolar diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities. Advanced Materials, 24(5), 647-652. https://doi.org/10.1002/adma.201102786

Chen, Zhuoying ; Lee, Mi Jung ; Ashraf, Raja ; Gu, Yun ; Albert-Seifried, Sebastian ; Meedom Nielsen, Martin ; Schroeder, Bob ; Anthopoulos, Thomas ; Heeney, Martin ; Mcculloch, Iain ; Sirringhaus, Henning. / High-performance ambipolar diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities. In: Advanced Materials. 2012 ; Vol. 24, No. 5. pp. 647-652.

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title = "High-performance ambipolar diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities",

abstract = "Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm 2 V -1 s -1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.",

keywords = "ambipolar devices, ambipolar transport, field-effect transistors, polymers, solution processing",

author = "Zhuoying Chen and Lee, {Mi Jung} and Raja Ashraf and Yun Gu and Sebastian Albert-Seifried and {Meedom Nielsen}, Martin and Bob Schroeder and Thomas Anthopoulos and Martin Heeney and Iain Mcculloch and Henning Sirringhaus",

year = "2012",

month = feb,

day = "2",

doi = "10.1002/adma.201102786",

language = "English (US)",

volume = "24",

pages = "647--652",

journal = "Advanced materials (Deerfield Beach, Fla.)",

issn = "0935-9648",

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number = "5",

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Chen, Z, Lee, MJ, Ashraf, R, Gu, Y, Albert-Seifried, S, Meedom Nielsen, M, Schroeder, B, Anthopoulos, T, Heeney, M, Mcculloch, I & Sirringhaus, H 2012, 'High-performance ambipolar diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities', Advanced Materials, vol. 24, no. 5, pp. 647-652. https://doi.org/10.1002/adma.201102786

High-performance ambipolar diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities. / Chen, Zhuoying; Lee, Mi Jung; Ashraf, Raja; Gu, Yun; Albert-Seifried, Sebastian; Meedom Nielsen, Martin; Schroeder, Bob; Anthopoulos, Thomas; Heeney, Martin; Mcculloch, Iain; Sirringhaus, Henning.

In: Advanced Materials, Vol. 24, No. 5, 02.02.2012, p. 647-652.

Research output: Contribution to journal › Article › peer-review

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T1 - High-performance ambipolar diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities

AU - Chen, Zhuoying

AU - Lee, Mi Jung

AU - Ashraf, Raja

AU - Gu, Yun

AU - Albert-Seifried, Sebastian

AU - Meedom Nielsen, Martin

AU - Schroeder, Bob

AU - Anthopoulos, Thomas

AU - Heeney, Martin

AU - Mcculloch, Iain

AU - Sirringhaus, Henning

PY - 2012/2/2

Y1 - 2012/2/2

N2 - Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm 2 V -1 s -1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.

AB - Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm 2 V -1 s -1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.

KW - ambipolar devices

KW - ambipolar transport

KW - field-effect transistors

KW - polymers

KW - solution processing

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JO - Advanced materials (Deerfield Beach, Fla.)

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IS - 5

ER -

High-performance ambipolar diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities

Abstract

Keywords

ASJC Scopus subject areas

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