High-Performance 1.55-µm Superluminescent Diode Based on Broad Gain InAs/InGaAlAs/InP Quantum Dash Active Region

Mohammed Zahed Mustafa Khan, Tien Khee Ng, Boon S. Ooi

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We report on the high-performance characteristics from superluminescent diodes (SLDs) based on four-stack InAs/InGaAlAs chirped-barrier thickness quantum dash (Qdash) in a well structure. The active region exhibits a measured broad gain spectrum of 140 nm, with a peak modal gain of ~41 cm-1. The noncoated two-section gainabsorber broad-area and ridge-waveguide device configuration exhibits an output power of > 20 mW and > 12 mW, respectively. The corresponding -3-dB bandwidths span ~82 nm and ~72 nm, with a small spectral ripple of
Original languageEnglish (US)
Pages (from-to)1-8
Number of pages8
JournalIEEE Photonics Journal
Volume6
Issue number4
DOIs
StatePublished - Aug 2014

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