High mobility of the strongly confined hole gas in AgTaO3/SrTiO3

Safdar Nazir, Udo Schwingenschlögl, M. Upadhyay Kahaly

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9Å) with a considerable carrier density of ∼1014cm−2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.
Original languageEnglish (US)
Pages (from-to)201607
JournalApplied Physics Letters
Volume100
Issue number20
DOIs
StatePublished - May 20 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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