High-mobility low-voltage ZnO and Li-doped ZnO transistors based on ZrO2 high-k dielectric grown by spray pyrolysis in ambient air

George Adamopoulos, Stuart Thomas, Paul H. Wöbkenberg, Donal D.C. Bradley, Martyn A. McLachlan, Thomas D. Anthopoulos

Research output: Contribution to journalArticlepeer-review

192 Scopus citations

Abstract

Sequential layers of the high-k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm2 V-1 s-1. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish (US)
Pages (from-to)1894-1898
Number of pages5
JournalAdvanced Materials
Volume23
Issue number16
DOIs
StatePublished - Apr 26 2011
Externally publishedYes

Keywords

  • ZnO
  • high-k dielectrics
  • oxide transistors
  • spray pyrolysis

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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