High mobility ambipolar charge transport in polyselenophene conjugated polymers

Zhuoying Chen*, Henrik Lemke, Sebastian Albert-Seifried, Mario Caironi, Martin Meedom Nielsen, Martin Heeney, Weimin Zhang, Iain Mcculloch, Henning Sirringhaus

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

170 Scopus citations

Abstract

(Figure Presented) High mobility ambipolor polymer field-effect transistors based on a series of regioregular polyselenophenes are presented together with their morphological and optical properties. Balanced electron and hole mobilities on the order of 0.03 cm2 V-1 s-1 are observed by employing a simple top-gate/bottom-contact configuration with photolithographically defined gold source/drain contacts. High gain complementary-like voltage inverters are demonstrated based on two identical ambipolar transistors.

Original languageEnglish (US)
Pages (from-to)2371-2375
Number of pages5
JournalAdvanced Materials
Volume22
Issue number21
DOIs
StatePublished - Jun 4 2010

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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