High-gain phototransistors based on a CVD MoS2 monolayer

Wenjing Zhang, Jing-Kai Huang, Chang Hsiao Chen, Yung Huang Chang, Yuh Jen Cheng, Lain-Jong Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

683 Scopus citations

Abstract

A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W-1) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p-dopants to MoS 2, decreasing the carrier mobility, photoresponsivity, and photogain.

Original languageEnglish (US)
Pages (from-to)3456-3461
Number of pages6
JournalAdvanced Materials
Volume25
Issue number25
DOIs
StatePublished - Jul 5 2013

Keywords

  • ambient air
  • molybdenum disulfides
  • photogain
  • phototransistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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