High-field sensitive magnetic tunneling junctions fabricated by inductively coupled plasma sputtering

Kebin Li*, Yihong Wu, Jinjun Qiu, Guchang Han, Zaibing Guo, Towchong Chong

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    7 Scopus citations

    Abstract

    High tunneling magnetoresistance ratios (TMR) were observed at room temperature on magnetic tunneling junctions (MTJ) fabricated by inductively coupled plasma sputtering. Using soft ferromagnetic electrode, high field sensitivity up to 6.1%/Oe was achieved in the MTJs having dimensions of 120 μm × 120 μm. Small ferromagnetic coupling field (11Oe) between the top and bottom ferromagnetic electrodes, high Vh at which the TMR ratio decreases to 50% of its initial value, high breakdown electric field were obtained.

    Original languageEnglish (US)
    Pages (from-to)89-95
    Number of pages7
    JournalJournal of Magnetism and Magnetic Materials
    Volume241
    Issue number1
    DOIs
    StatePublished - Jan 1 2002

    Keywords

    • Giant magnetoresistance
    • Magnetic tunneling junctions
    • Magnetism
    • Multiyers

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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