High-efficiency silicon heterojunction solar cells: From physics to production lines

S. De Wolf*, Y. Andrault, L. Barraud, R. Bartlome, D. Bätzner, P. Bôle, G. Choong, B. Demaurex, A. Descoeudres, C. Guérin, N. Holm, M. Kobas, D. Lachenal, B. Mendes, B. Strahm, M. Tesfai, G. Wahli, F. Wuensch, F. Zicarelli, A. BuechelC. Ballif

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Silicon heterojunction technology (Si-HJT) consists of thin amorphous silicon layers on monocrystalline silicon wafers and allows for photovoltaic solar cells with energy-conversion efficiencies above 20 %, also at industrial-production level. This article reports how this may be achieved. First, we focus on the surface-passivation mechanism of intrinsic and doped amorphous silicon films in such solar cells, enabling record-high values for the open-circuit voltage. Next, the industrial upscaling in large-area reactors of such film deposition is discussed, including the fabrication of solar cells with energy-conversion efficiencies as high as 21%.

Original languageEnglish (US)
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages1986-1989
Number of pages4
DOIs
StatePublished - Dec 1 2010
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: Nov 1 2010Nov 4 2010

Publication series

NameICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period11/1/1011/4/10

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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