High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

Meng-Lin Tsai, Ming-yang Li, Yumeng Shi, Lih-Juann Chen, Lain-Jong Li, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Electrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.
Original languageEnglish (US)
Pages (from-to)37-42
Number of pages6
JournalNanoscale Horiz.
Volume2
Issue number1
DOIs
StatePublished - Oct 28 2016

Fingerprint

Dive into the research topics of 'High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions'. Together they form a unique fingerprint.

Cite this