High efficiency n-type silicon solar cells featuring passivated contact to laser doped regions

Xinbo Yang*, James Bullock, Qunyu Bi, Klaus Weber

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Minimizing carrier recombination at cell contacts becomes increasingly important for reaching high efficiency. In this work, the passivated contact concept is implemented into n-type silicon solar cells with laser-processed local back surface fields. The passivation and contact characteristics of the SiO2/amorphous silicon (a-Si:H) stack on localized laser doped n+ regions are investigated. We find that the SiO2/a-Si:H stack provides not only good passivation to laser doped n+ regions but also allows a low contact resistivity after thermal annealing. With the implementation of the SiO2/a-Si:H passivated contact, an absolute efficiency gain of up to 1.5% is achieved for n-type solar cells.

Original languageEnglish (US)
Article number113901
JournalApplied Physics Letters
Volume106
Issue number11
DOIs
StatePublished - Mar 16 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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