A high density cross-point (CP) MRAM is presented. The CP MRAM comprises two guided synthetic-anti-ferromagnetic (SAF) tri-layers. The SAF tri-layer with higher stiffness serves as the recording layer, and another SAF tri-layer with lower stiffness serves as the reading layer. The easy axis of the recording layer is perpendicular to that of the reading layer. The two orthogonally oriented digital and word lines are aligned 45 degree with the easy axis of the SAF layer. At the un-selected or half-selected state, the resistance is half of the sum of the maximum. Similar to the Flash memory, the cell can be selectively read without the selective transistor. These allow the CP MRAM to achieve higher integrated density and lower parasitic current. The SAF tri-layer increases the writing and reading reliability.