High density Flash-like cross-point MRAM

Yuankai Zheng*, Kebin Li, Jinjun Qiu, Zaibing Guo, Guchang Han, Ping Luo, Lihua An, Seng Ghee Tan, Zhiyong Liu, Li Wang, Baoyu Zong, Bo Liu

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    A high density cross-point (CP) MRAM is presented. The CP MRAM comprises two guided synthetic-anti-ferromagnetic (SAF) tri-layers. The SAF tri-layer with higher stiffness serves as the recording layer, and another SAF tri-layer with lower stiffness serves as the reading layer. The easy axis of the recording layer is perpendicular to that of the reading layer. The two orthogonally oriented digital and word lines are aligned 45 degree with the easy axis of the SAF layer. At the un-selected or half-selected state, the resistance is half of the sum of the maximum. Similar to the Flash memory, the cell can be selectively read without the selective transistor. These allow the CP MRAM to achieve higher integrated density and lower parasitic current. The SAF tri-layer increases the writing and reading reliability.

    Original languageEnglish (US)
    Title of host publicationICSICT-2006
    Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
    Pages756-759
    Number of pages4
    DOIs
    StatePublished - Aug 2 2007
    EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
    Duration: Oct 23 2006Oct 26 2006

    Publication series

    NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

    Other

    OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
    CountryChina
    CityShanghai
    Period10/23/0610/26/06

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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