High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications

Chao Shen, Tien Khee Ng, John T. Leonard, Arash Pourhashemi, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Ahmed Y. Alyamani, Munir M. El-desouki, Boon S. Ooi

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Abstract

A high-brightness, droop-free, and speckle-free InGaN/GaN quantum well blue superluminescent diode (SLD) was demonstrated on a semipolar (2021) GaN substrate. The 447-nm emitting SLD has a broad spectral linewidth of 6.3 nm at an optical power of 123 mW. A peak optical power of 256 mW was achieved at 700 mA CW injection current. By combining YAG:Ce phosphor, SLD-generated white light shows a color-rendering index (CRI) of 68.9 and a correlated color temperature (CCT) of 4340 K. The measured frequency response of the SLD revealed a -3 dB bandwidth of 560 MHz, thus demonstrating the feasibility of the device for both solid-state lighting (SSL) and visible-light communication (VLC) applications. © 2016 Optical Society of America.
Original languageEnglish (US)
Pages (from-to)2608
JournalOptics Letters
Volume41
Issue number11
DOIs
StatePublished - May 26 2016

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