Growths of ultra high density InGaN-based quantum dots on self-assembled diblock copolymer nanopatterns

Guangyu Liu*, Hongping Zhao, Joo Hyung Park, Luke J. Mawst, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Selective area growths of highly-uniform InGaN quantum dots (QDs) on dielectric nanopatterns defined by self-assembled diblock copolymer were demonstrated with ultra-high QDs density of 8×1010cm -2, which represents the highest QDs density reported for nitride-based QDs.

Original languageEnglish (US)
Title of host publicationLasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Subtitle of host publication2010 Laser Science to Photonic Applications, CLEO/QELS 2010
StatePublished - 2010
Externally publishedYes
EventLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States
Duration: May 16 2010May 21 2010

Other

OtherLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
CountryUnited States
CitySan Jose, CA
Period05/16/1005/21/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

Fingerprint

Dive into the research topics of 'Growths of ultra high density InGaN-based quantum dots on self-assembled diblock copolymer nanopatterns'. Together they form a unique fingerprint.

Cite this