Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded-temperature profile

Hongping Zhao, Guangyu Liu, Xiaohang Li, G. S. Huang, S. Tafon Penn, Volkmar Dierolf, Nelson Tansu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

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Engineering & Materials Science

Physics & Astronomy