Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded-temperature profile

Hongping Zhao, Guangyu Liu, Xiaohang Li, G. S. Huang, S. Tafon Penn, Volkmar Dierolf, Nelson Tansu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The use of 3-layer staggered InGaN quantum wells light-emitting diodes at 520-525 nm, grown by metal-organic chemical vapor deposition with graded-temperature profile, resulted in increase in efficiency and output power by 2-times.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2009
StatePublished - Dec 1 2009
EventConference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States
Duration: May 31 2009Jun 5 2009

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics, CLEO 2009
CountryUnited States
CityBaltimore, MD
Period05/31/0906/5/09

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Fingerprint

Dive into the research topics of 'Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded-temperature profile'. Together they form a unique fingerprint.

Cite this