Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile

Hongping Zhao*, Guangyu Liu, Xiaohang Li, G. S. Huang, Jonathan D. Poplawsky, S. Tafon Penn, Volkmar Dierolf, Nelson Tansu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Physics & Astronomy