Growths of lattice-matched AlInN / GaN for optoelectronics applications

Guangyu Liu*, Hongping Zhao, Jing Zhang, Hua Tong, G. S. Huang, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Growth studies of AlInN alloys with different indium contents were performed by metalorganic chemical vapor deposition. The optimized growth condition for lattice-matched alloy is obtained at growth temperature of 780°C and pressure of 20 Torr.

Original languageEnglish (US)
Title of host publication2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages534-535
Number of pages2
DOIs
StatePublished - Dec 1 2010
Event23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States
Duration: Nov 7 2010Nov 11 2010

Publication series

Name2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Other

Other23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
CountryUnited States
CityDenver, CO
Period11/7/1011/11/10

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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