Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression

Guangyu Liu*, Hongping Zhao, Jing Zhang, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The growths of InGaN quantum wells light-emitting diodes with AlInN thin barrier were performed by metal-organic chemical vapor deposition, and this approach led to reduction in thermionic carrier escape and efficiency droop.

Original languageEnglish (US)
Title of host publication2011 Conference on Lasers and Electro-Optics
Subtitle of host publicationLaser Science to Photonic Applications, CLEO 2011
StatePublished - Sep 1 2011
Event2011 Conference on Lasers and Electro-Optics, CLEO 2011 - Baltimore, MD, United States
Duration: May 1 2011May 6 2011

Publication series

Name2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

Other

Other2011 Conference on Lasers and Electro-Optics, CLEO 2011
CountryUnited States
CityBaltimore, MD
Period05/1/1105/6/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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