Growth selectivity of hexagonal-boron nitride layers on Ni with various crystal orientations

Yi Hsien Lee*, Keng Ku Liu, Ang Yu Lu, Chih Yu Wu, Cheng Te Lin, Wenjing Zhang, Ching Yuan Su, Chang Lung Hsu, Tsung Wu Lin, Kung Hwu Wei, Yumeng Shi, Lain-Jong Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

63 Scopus citations

Abstract

Layered hexagonal-boron nitride (h-BN) films were synthesized by chemical vapor deposition (CVD) on Ni foils using ammonia borane as a precursor. Confocal Raman spectroscopy and electron backscatter diffraction (EBSD) were used to probe the effect of underlying Ni crystals with various orientations on growth behaviors of h-BN layers. The growth of the h-BN layers strongly depends on the Ni crystal orientations, where the growth rate of h-BN is larger on Ni(100)-like crystal surfaces but the growth on Ni(111)-like surfaces is not detectable, suggesting that Ni (100)-like facets are likely to promote the growth of h-BN compared with Ni (111)-like surfaces. The observation is in clear contrast to the reported growth of h-BN on Ni(111) in an ultrahigh vacuum environment. The as-grown CVD h-BN films on Ni exhibit a layered structure as revealed by atomic force microscopy (AFM). Thin h-BN layers are found on the Ni domain with a low growth rate. The observation of h-BN growth on various Ni grains may provide insights for the control of thickness, size and morphology of CVD h-BN films.

Original languageEnglish (US)
Pages (from-to)111-115
Number of pages5
JournalRSC Advances
Volume2
Issue number1
DOIs
StatePublished - Jan 7 2012

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

Fingerprint

Dive into the research topics of 'Growth selectivity of hexagonal-boron nitride layers on Ni with various crystal orientations'. Together they form a unique fingerprint.

Cite this