Growth of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded temperature profile

Hongping Zhao*, Guangyu Liu, Xiaohang Li, Ronald A. Arif, G. S. Huang, Yik Khoon Ee, Nelson Tansu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Staggered InGaN quantum wells (QWs) are analyzed as improved active media based on a 6-band k·p method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect. The growths of staggered InGaN QW emitting at green regime were conducted by employing graded temperature profile. The electroluminescence measurement shows a significant enhancement of the output power of the staggered InGaN QW LED as compared to that of the conventional InGaN QW LED.

Original languageEnglish (US)
Article number72310E
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume7231
DOIs
StatePublished - Apr 6 2009
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII - San Jose, CA, United States
Duration: Jan 27 2009Jan 29 2009

Keywords

  • III-nitride
  • InGaN QWs
  • Light emitting diodes
  • Staggered InGaN QWs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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