Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition

Muhammad Jamil*, Tianming Xu, Tahir Zaidi, Andrew Melton, Balakrishnam Jampana, Chee Loon Tan, Boon S. Ooi, Ian T. Ferguson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We report on the growth of unidirectional InN micropyramids by using a simple pattern-free epitaxial technique. These pyramids were grown on a GaN layer deposited on sapphire via metalorganic chemical vapor deposition (MOCVD). The XRD full width at half maximum (FWHM) was observed to be as low as 0.168 for the InN (0002) v rocking curve which indicates very good crystal quality of these InN pyramids. The Photoluminescence (PL) emission of InN micropyramids is ∼0.78 eV. The dependency on growth conditions of pyramid density, facet stabilization, and pyramid structural quality have been evaluated and discussed.

Original languageEnglish (US)
Pages (from-to)1895-1899
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume207
Issue number8
DOIs
StatePublished - Aug 2010
Externally publishedYes

Keywords

  • III-nitrides
  • InN
  • MOCVD
  • Nicopyramids

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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