Growth of indium nanorods by magnetron sputtering

He Lin Wei*, Han Chen Huang, Xixiang Zhang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Indium nanorods are grown on silicon substrates by using magnetron-sputtering technique. Film morphologies and nanorod microstructure are investigated by using scanning electron microscopy, high-resolution transmission electron microscopy (HRTEM), and x-ray diffraction. It is found that the mean diameter of the nanorods ranges from 30nm to 100nm and the height ranges from 30nm to 200nm. The HRTEM investigations show that the indium nanorods are single crystals and grow along the [100] axis. The nanorods grow from the facets near the surface undulation that is caused by compressive stress in the indium grains generated during grain coalescence process. For low melting point and high diffusivity metal, such as bismuth and indium, this spontaneous nanorod growth mechanism can be used to fabricate nanostructures.

Original languageEnglish (US)
Article number075
Pages (from-to)1627-1630
Number of pages4
JournalChinese Physics Letters
Volume23
Issue number6
DOIs
StatePublished - Jun 1 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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