One-, two- and three-flow metalorganic vapor phase epitaxy (MOVPE) methods have been compared in GaN growth, and each growth is analyzed by computational fluid dynamics (CFD). It is found that two-flow method shows better growth condition for achieving high quality layers compared to one- and three-flow methods. A GaN layer with high Hall mobility of 360 cm 2/Vs is obtained by two-flow MOVPE growth despite no low-temperature buffer layer. The V/III decomposition ratio of NH 2/GaCH 3 is calculated by CFD simulation in gas phase just on substrate surface. The V/III ratio is in a narrow region to get high-mobility samples.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physica Status Solidi (A) Applied Research|
|State||Published - Nov 2001|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials