Growth of GaN Layers by One-, Two-, and Three-Flow Metalorganic Vapor Phase Epitaxy

K. Ohkawa*, A. Hirako, M. Yoshitani

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

One-, two- and three-flow metalorganic vapor phase epitaxy (MOVPE) methods have been compared in GaN growth, and each growth is analyzed by computational fluid dynamics (CFD). It is found that two-flow method shows better growth condition for achieving high quality layers compared to one- and three-flow methods. A GaN layer with high Hall mobility of 360 cm 2/Vs is obtained by two-flow MOVPE growth despite no low-temperature buffer layer. The V/III decomposition ratio of NH 2/GaCH 3 is calculated by CFD simulation in gas phase just on substrate surface. The V/III ratio is in a narrow region to get high-mobility samples.

Original languageEnglish (US)
Pages (from-to)621-624
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume188
Issue number2
DOIs
StatePublished - Nov 2001
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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