Growth mechanism of TiN film on dielectric films and the effects on the work function

K. Choi*, P. Lysaght, Husam Niman Alshareef, C. Huffman, H. C. Wen, R. Harris, H. Luan, P. Y. Hung, C. Sparks, M. Cruz, K. Matthews, P. Majhi, B. H. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

We have investigated the growth mechanism of ALD-TiN film on different dielectrics and the resulting effective work function value. TiN nucleation rate and growth rate are found to be dependent on the dielectric films. TiN growth mechanism changed from 3-D type on SiO2 to layer-by-layer type on HfO2. The minimum TiN thickness required for a complete surface coverage varies according to the growth mechanism. Capacitor (MOSCAP) characterization revealed that the effective work function of TiN is dependent not only on dielectric films but also on the TiN thickness. The behavior of work function and fixed charge correlated with the growth mechanism of TiN on dielectric films.

Original languageEnglish (US)
Pages (from-to)141-144
Number of pages4
JournalThin Solid Films
Volume486
Issue number1-2
DOIs
StatePublished - Aug 22 2005
Externally publishedYes

Keywords

  • Atomic layer deposition
  • High-k gate dielectric
  • MOSFET
  • Metal gate electrode
  • TiN
  • Work function

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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