Growth mechanism of ALD-TiN and the thickness dependence of work function

K. Choi*, P. Lysaght, Husam Niman Alshareef, H. C. Wen, C. Huffman, R. Harris, H. Luan, K. Matthews, P. Majhi, B. H. Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We investigated the growth mechanism and work function of ALD-TiN film on SiO2 and HfSiO films to understand how the workfunction is related to process conditions and starting surface. TiN nucleation rate and growth rate are found to be dependent on the dielectric films. The effective work function of TiN has been changed as a function of film thickness and also affected by dielectric films.

Original languageEnglish (US)
Title of host publication2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers
Pages103-104
Number of pages2
DOIs
StatePublished - Oct 31 2005
Event2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH - Hsinchu, Taiwan, Province of China
Duration: Apr 25 2005Apr 27 2005

Publication series

Name2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Other

Other2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH
CountryTaiwan, Province of China
CityHsinchu
Period04/25/0504/27/05

ASJC Scopus subject areas

  • Engineering(all)

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