Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate

Yik Khoon Ee*, Xiao Hang Li, J. M. Biser, W. Cao, Helen M. Chan, R. P. Vinci, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Abbreviated growth mode of InGaN-based light-emitting diodes on nano-patterned sapphire leads to reduction in dislocation density and non-radiative recombination rate, and 37% increase in internal quantum efficiency.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2010
StatePublished - 2010
Externally publishedYes
EventConference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States
Duration: May 16 2010May 21 2010

Other

OtherConference on Lasers and Electro-Optics, CLEO 2010
CountryUnited States
CitySan Jose, CA
Period05/16/1005/21/10

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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