Growth characterization of inxGa1-xAs/Al xGa1-xAs multi-oxide layer vertical-cavity surface-emitting lasers structure

S. M. Mitani; M. S. Alias; A. A. Manaf; M. R. Yahya; A. F A Mat

doi:10.1109/SMELEC.2008.4770393

Growth characterization of inxGa1-xAs/Al xGa1-xAs multi-oxide layer vertical-cavity surface-emitting lasers structure

S. M. Mitani, M. S. Alias, A. A. Manaf, M. R. Yahya, A. F A Mat

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents design and characterization of high performance multioxide 970nm InGaAs/AlGaAs MQWs verticalcavity surface-emitting lasers (VCSELs). Micro-optical components can modify the free-space optical properties of VCSELs for various applications such as illumination purposes, beam profiling in sensing applications and fiber coupling to transceiver modules. However, careful adjustment of material parameters leads to an excellent characterization results. The threshold current, heat flux, strained quantum-well gain, wave intensity at the laser facet and kink-free L-I curve have been obtained in the current design and presented in this communication. The various analyses demonstrate that the multi-oxide layer VCSEL improves the device performance.

Original language	English (US)
Title of host publication	ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics
Pages	584-587
Number of pages	4
DOIs	https://doi.org/10.1109/SMELEC.2008.4770393
State	Published - 2008
Externally published	Yes
Event	2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008 - Johor Bahru, Johor, Malaysia Duration: Nov 25 2008 → Nov 27 2008

Other

Other	2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008
Country	Malaysia
City	Johor Bahru, Johor
Period	11/25/08 → 11/27/08

Keywords

InGaAs
Integrated optoelectronics
Micro-optics
VCSELs

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/SMELEC.2008.4770393

Cite this

@inproceedings{ffbe68a642d54e6ab06b8b808eaaf5fd,

title = "Growth characterization of inxGa1-xAs/Al xGa1-xAs multi-oxide layer vertical-cavity surface-emitting lasers structure",

abstract = "This paper presents design and characterization of high performance multioxide 970nm InGaAs/AlGaAs MQWs verticalcavity surface-emitting lasers (VCSELs). Micro-optical components can modify the free-space optical properties of VCSELs for various applications such as illumination purposes, beam profiling in sensing applications and fiber coupling to transceiver modules. However, careful adjustment of material parameters leads to an excellent characterization results. The threshold current, heat flux, strained quantum-well gain, wave intensity at the laser facet and kink-free L-I curve have been obtained in the current design and presented in this communication. The various analyses demonstrate that the multi-oxide layer VCSEL improves the device performance.",

keywords = "InGaAs, Integrated optoelectronics, Micro-optics, VCSELs",

author = "Mitani, {S. M.} and Alias, {M. S.} and Manaf, {A. A.} and Yahya, {M. R.} and Mat, {A. F A}",

year = "2008",

doi = "10.1109/SMELEC.2008.4770393",

language = "English (US)",

isbn = "9781424425617",

pages = "584--587",

booktitle = "ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics",

note = "2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008 ; Conference date: 25-11-2008 Through 27-11-2008",

}

Mitani, SM, Alias, MS, Manaf, AA, Yahya, MR & Mat, AFA 2008, Growth characterization of inxGa1-xAs/Al xGa1-xAs multi-oxide layer vertical-cavity surface-emitting lasers structure. in ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics., 4770393, pp. 584-587, 2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008, Johor Bahru, Johor, Malaysia, 11/25/08. https://doi.org/10.1109/SMELEC.2008.4770393

Growth characterization of inxGa1-xAs/Al xGa1-xAs multi-oxide layer vertical-cavity surface-emitting lasers structure. / Mitani, S. M.; Alias, M. S.; Manaf, A. A.; Yahya, M. R.; Mat, A. F A.

ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics. 2008. p. 584-587 4770393.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth characterization of inxGa1-xAs/Al xGa1-xAs multi-oxide layer vertical-cavity surface-emitting lasers structure

AU - Mitani, S. M.

AU - Alias, M. S.

AU - Manaf, A. A.

AU - Yahya, M. R.

AU - Mat, A. F A

PY - 2008

Y1 - 2008

N2 - This paper presents design and characterization of high performance multioxide 970nm InGaAs/AlGaAs MQWs verticalcavity surface-emitting lasers (VCSELs). Micro-optical components can modify the free-space optical properties of VCSELs for various applications such as illumination purposes, beam profiling in sensing applications and fiber coupling to transceiver modules. However, careful adjustment of material parameters leads to an excellent characterization results. The threshold current, heat flux, strained quantum-well gain, wave intensity at the laser facet and kink-free L-I curve have been obtained in the current design and presented in this communication. The various analyses demonstrate that the multi-oxide layer VCSEL improves the device performance.

AB - This paper presents design and characterization of high performance multioxide 970nm InGaAs/AlGaAs MQWs verticalcavity surface-emitting lasers (VCSELs). Micro-optical components can modify the free-space optical properties of VCSELs for various applications such as illumination purposes, beam profiling in sensing applications and fiber coupling to transceiver modules. However, careful adjustment of material parameters leads to an excellent characterization results. The threshold current, heat flux, strained quantum-well gain, wave intensity at the laser facet and kink-free L-I curve have been obtained in the current design and presented in this communication. The various analyses demonstrate that the multi-oxide layer VCSEL improves the device performance.

KW - InGaAs

KW - Integrated optoelectronics

KW - Micro-optics

KW - VCSELs

UR - http://www.scopus.com/inward/record.url?scp=65949083117&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2008.4770393

DO - 10.1109/SMELEC.2008.4770393

M3 - Conference contribution

AN - SCOPUS:65949083117

SN - 9781424425617

SP - 584

EP - 587

BT - ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics

T2 - 2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008

Y2 - 25 November 2008 through 27 November 2008

ER -

Growth characterization of inxGa1-xAs/Al xGa1-xAs multi-oxide layer vertical-cavity surface-emitting lasers structure

Abstract

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this