Growth characterization of inxGa1-xAs/Al xGa1-xAs multi-oxide layer vertical-cavity surface-emitting lasers structure

S. M. Mitani, M. S. Alias, A. A. Manaf, M. R. Yahya, A. F A Mat

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents design and characterization of high performance multioxide 970nm InGaAs/AlGaAs MQWs verticalcavity surface-emitting lasers (VCSELs). Micro-optical components can modify the free-space optical properties of VCSELs for various applications such as illumination purposes, beam profiling in sensing applications and fiber coupling to transceiver modules. However, careful adjustment of material parameters leads to an excellent characterization results. The threshold current, heat flux, strained quantum-well gain, wave intensity at the laser facet and kink-free L-I curve have been obtained in the current design and presented in this communication. The various analyses demonstrate that the multi-oxide layer VCSEL improves the device performance.

Original languageEnglish (US)
Title of host publicationICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics
Pages584-587
Number of pages4
DOIs
StatePublished - 2008
Externally publishedYes
Event2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008 - Johor Bahru, Johor, Malaysia
Duration: Nov 25 2008Nov 27 2008

Other

Other2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008
CountryMalaysia
CityJohor Bahru, Johor
Period11/25/0811/27/08

Keywords

  • InGaAs
  • Integrated optoelectronics
  • Micro-optics
  • VCSELs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Growth characterization of inxGa1-xAs/Al xGa1-xAs multi-oxide layer vertical-cavity surface-emitting lasers structure'. Together they form a unique fingerprint.

Cite this