Growth behavior of AlInGaN films

J. Z. Shang, B. P. Zhang*, M. H. Mao, L. E. Cai, J. Y. Zhang, Z. L. Fang, B. L. Liu, J. Z. Yu, Q. M. Wang, K. Kusakabe, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The structural and surface properties of AlInGaN quaternary films grown at different temperatures on GaN templates by metalorganic chemical vapor deposition are investigated. Formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. The surface is featured with V-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of AlInGaN layers. The two-layer structure is interpreted by taking into account of the strain status in AlInGaN layers.

Original languageEnglish (US)
Pages (from-to)474-477
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number3
DOIs
StatePublished - Jan 15 2009

Keywords

  • A1. Scanning electron microscope
  • A1. Strain
  • A1. X-ray diffraction
  • B1. AlInGaN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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