Group-III intermixing in InAs/InGaAlAs quantum dots-in-well

Y. Wang*, H. S. Djie, B. S. Ooi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

We report selective postgrowth band gap tuning of InAs/InGaAlAs quantum dots-in-well grown on InP substrate using impurity-free group-III intermixing. In contrast to most reported intermixing results, Si xN y annealing cap results in a larger band gap blueshift than SiO 2 annealing cap with a differential shift of 92 nm after annealing at 800°C for 30 s. Intermixing also results in large wavelength tuning from 1.6 to 1.37 μm at room temperature, accompanied by luminescence linewidth reduction and intensity improvement. According to our theoretical model, we postulate that the unusual In(GaAl)As intermixing is governed by different interdiffusion rates of group-III atoms.

Original languageEnglish (US)
Article number111110
JournalApplied Physics Letters
Volume88
Issue number11
DOIs
StatePublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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