Graphene-Au nanoparticle based vertical heterostructures: a novel route towards high- ZT Thermoelectric devices

Zhen-Yu Juang, Chien-Chih Tseng, Yumeng Shi, Wen-Pin Hsieh, Sou Ryuzaki, Noboru Saito, Chia-En Hsiung, Wen-Hao Chang, Yenny Hernandez, Yu Han, Kaoru Tamada, Lain-Jong Li

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Monolayer graphene exhibits impressive in-plane thermal conductivity (>1000Wm–1 K–1). However, the out-of-plane thermal transport is limited due to the weak van der Waals interaction, indicating the possibility of constructing a vertical thermoelectric (TE) device. Here, we propose a cross-plane TE device based on the vertical heterostructures of few-layer graphene and gold nanoparticles (AuNPs) on Si substrates, where the incorporation of AuNPs further inhibits the phonon transport and enhances the electrical conductivity along vertical direction. A measurable Seebeck voltage is produced vertically between top graphene and bottom Si when the device is put on a hot surface and the figure of merit ZT is estimated as 1 at room temperature from the transient Harman method. The polarity of the output voltage is determined by the carrier polarity of the substrate. The device concept is also applicable to a flexible and transparent substrate as demonstrated.
Original languageEnglish (US)
Pages (from-to)385-391
Number of pages7
JournalNano Energy
Volume38
DOIs
StatePublished - Jun 3 2017

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