Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

Chih-Pin Lin, Li-Syuan Lyu, Ching-Ting Lin, Pang-Shiuan Liu, Wen-Hao Chang, Lain-Jong Li, Tuo-Hung Hou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.
Original languageEnglish (US)
Title of host publication2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages476-479
Number of pages4
ISBN (Print)9781479999286
DOIs
StatePublished - Aug 27 2015

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