We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.
|Original language||English (US)|
|Title of host publication||2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||4|
|State||Published - Aug 27 2015|