Grain boundaries as preferential sites for resistive switching in the HfO 2 resistive random access memory structures

M. Lanza, K. Zhang, M. Porti, M. Nafra, Z. Y. Shen, L. F. Liu, J. F. Kang, D. Gilmer, G. Bersuker

Research output: Contribution to journalArticlepeer-review

133 Scopus citations

Fingerprint

Dive into the research topics of 'Grain boundaries as preferential sites for resistive switching in the HfO 2 resistive random access memory structures'. Together they form a unique fingerprint.

Physics & Astronomy