TY - JOUR
T1 - Giant photoresponse in quantized SrRuO3 monolayer at oxide interfaces
AU - Liu, Heng-Jui
AU - Wang, Jing-Ching
AU - Cho, Deok-Yong
AU - Ho, Kang-Ting
AU - Lin, Jheng-Cyuan
AU - Huang, Bo-Chao
AU - Fang, Yue-wen
AU - Zhu, Yuan-Min
AU - Zhan, Qian
AU - Xie, Lin
AU - Pan, Xiao-Qing
AU - Chiu, Ya-Ping
AU - Duan, Chun-gang
AU - He, Jr-Hau
AU - Chu, Ying-Hao
N1 - KAUST Repository Item: Exported on 2020-04-23
Acknowledgements: The authors gratefully acknowledge the financial support by the Ministry of Science and Technology under Grant No. MOST 103-2119-M-009 -003 -MY3 and MOST 106-2112-M-005-001-. The work is supported in part by Ministry of Science, ICT and Future Planning of Korea under Grant No. NRF-2015R1C1A1A02037514. The work at University of Science and Technology Beijing is supported by National Natural Science Foundation of China with Grant Nos. 51571021 and 51371031. The work at Nanjing University is supported through the National Basic Research Program of China under Grant No. 2015CB654900. The work at University of California-Irvine is supported by the National Science Foundation through the grant No. DMR-1506535.
PY - 2018/1/31
Y1 - 2018/1/31
N2 - The photoelectric effect in semiconductors is the main mechanism for most modern optoelectronic devices, in which the adequate bandgap plays the key role for acquiring high photoresponse. Among numerous material categories applied in this field, the complex oxides exhibit great possibilities because they present a wide distribution of band gaps for absorbing light with any wavelength. Their physical properties and lattice structures are always strongly coupled and sensitive to light illumination. Moreover, the confinement of dimensionality of the complex oxides in the heterostructures can provide more diversities in designing and modulating the band structures. On the basis of this perspective, we have chosen itinerary ferromagnetic SrRuO3 as the model material, and fabricated it in one-unit-cell thickness in order to open a small band gap for effective utilization of visible light. By inserting this SrRuO3 monolayer at the interface of the well-developed two-dimensional electron gas system (LaAlO3/SrTiO3), the resistance of the monolayer can be further revealed. In addition, a giant enhancement (>300%) of photoresponse under illumination of visible light with power density of 500 mW/cm2 is also observed. Such can be ascribed to the further modulation of band structure of the SrRuO3 monolayer under the illumination, confirmed by cross-section scanning tunneling microscopy (XSTM). Therefore, this study demonstrates a simple route to design and explore the potential low dimensional oxide materials for future optoelectronic devices.
AB - The photoelectric effect in semiconductors is the main mechanism for most modern optoelectronic devices, in which the adequate bandgap plays the key role for acquiring high photoresponse. Among numerous material categories applied in this field, the complex oxides exhibit great possibilities because they present a wide distribution of band gaps for absorbing light with any wavelength. Their physical properties and lattice structures are always strongly coupled and sensitive to light illumination. Moreover, the confinement of dimensionality of the complex oxides in the heterostructures can provide more diversities in designing and modulating the band structures. On the basis of this perspective, we have chosen itinerary ferromagnetic SrRuO3 as the model material, and fabricated it in one-unit-cell thickness in order to open a small band gap for effective utilization of visible light. By inserting this SrRuO3 monolayer at the interface of the well-developed two-dimensional electron gas system (LaAlO3/SrTiO3), the resistance of the monolayer can be further revealed. In addition, a giant enhancement (>300%) of photoresponse under illumination of visible light with power density of 500 mW/cm2 is also observed. Such can be ascribed to the further modulation of band structure of the SrRuO3 monolayer under the illumination, confirmed by cross-section scanning tunneling microscopy (XSTM). Therefore, this study demonstrates a simple route to design and explore the potential low dimensional oxide materials for future optoelectronic devices.
UR - http://hdl.handle.net/10754/627132
UR - https://pubs.acs.org/doi/10.1021/acsphotonics.7b01339
UR - http://www.scopus.com/inward/record.url?scp=85044271978&partnerID=8YFLogxK
U2 - 10.1021/acsphotonics.7b01339
DO - 10.1021/acsphotonics.7b01339
M3 - Article
AN - SCOPUS:85044271978
VL - 5
SP - 1041
EP - 1049
JO - ACS Photonics
JF - ACS Photonics
SN - 2330-4022
IS - 3
ER -