GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode

Chao Shen, Changmin Lee, Tien Khee Ng, James S. Speck, Shuji Nakamura, Steven P. DenBaars, Ahmed Y. Alyamani, Munir M. Eldesouki, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

A 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.
Original languageEnglish (US)
Title of host publication2016 IEEE Photonics Conference (IPC)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages813-814
Number of pages2
ISBN (Print)9781509019069
DOIs
StatePublished - Jan 30 2017

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