A 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.
|Original language||English (US)|
|Title of host publication||2016 IEEE Photonics Conference (IPC)|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||2|
|State||Published - Jan 30 2017|