Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications

N.G. Young, R.M. Farrell, M. Iza, S. Nakamura, S. P. DenBaars, C. Weisbuch, J.S. Speck

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

We demonstrate n-type doping of GaN with Ge by MOCVD at high concentrations that are necessary to fully screen the polarization fields in c-plane InGaN/GaN quantum wells. Hall measurements show linear Ge incorporation with dopant flow rate and carrier concentrations exceeding 1×10 cm. GaN:Ge layers exhibit excellent electron mobility, high conductivity, and contact resistivity comparable to the best unannealed contacts to Si-doped GaN. However, the surface morphology begins to degrade with Ge concentrations above 1×10 cm, resulting in severe step bunching and a network of plateaus and trenches, even in layers as thin as 10 nm.
Original languageEnglish (US)
Pages (from-to)105-110
Number of pages6
JournalJournal of Crystal Growth
Volume455
DOIs
StatePublished - Oct 1 2016
Externally publishedYes

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