Generation of multiple energy bandgaps using a gray mask process and quantum well intermixing

Seng Lee Ng*, Hwi Siong Lim, Yee Loy Lam, Yuen Chuen Chan, Boon Siew Ooi, Vincent Aimez, Jacques Beauvais, Jean Beerens

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We report a technique for generation of multiple energy bandgaps using a combination of one-step gray mask lithography and low-energy arsenic ion implantation induced disordering. Using this technique, we have successfully integrated 12-section with variable energy bandgaps on a single InGaAs/InGaAsP laser heterostructure. When compared to conventional processes, this novel technique is simple, promising and cost effective.

Original languageEnglish (US)
Pages (from-to)1080-1084
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number2 B
DOIs
StatePublished - Feb 2002

Keywords

  • Gray mask
  • Ion-implantation induced disordering
  • Reactive ion etching

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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