Gateless AlGaN/GaN HEMT response to block co-polymers

B. S. Kang*, G. Louche, R. S. Duran, Yves Gnanou, S. J. Pearton, F. Ren

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Gateless AlGaN/GaN high electron mobility transistor(HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. The polar nature of some of these polymer chains lead to a change of surface charges in gate region on the HEMT, producing a change in surface potential at the semiconductor/liquid interface. The nitride sensors appear to be promising for a wide range of chemical gas, combustion gas, liquid and strain sensing.

Original languageEnglish (US)
Pages39-45
Number of pages7
StatePublished - Oct 28 2004
EventState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States
Duration: May 9 2004May 14 2004

Other

OtherState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
CountryUnited States
CitySan Antonio, TX
Period05/9/0405/14/04

ASJC Scopus subject areas

  • Engineering(all)

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