Gate oxide wear out using novel polysilazane-base inorganic as nano-scaling shallow trench filling

Ching Yuan Ho*, Kai Yao Shih, Jr-Hau He

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The phenomenon of floating gate (FG) crystallization and extrinsic gate oxide breakdown (Vbd) are discussed using polysilazane-base inorganic material SOD (Spin-On-Dielectric) as shallow trench isolation (STI) filling for 50 nm flash memory fabrication. The pinholes are found along the FG grain boundary in wide active regions because of tensile stress induced by SOD material in STI process, thus gate oxide wears out by following wet cleaning steps. The chemical oxide formation during FG deposition can effectively inhibit gate oxide early breakdown. Moreover, FG sheet resistance (Rs) in 550 °C/air deposition condition can significantly reduce about 20% in comparison with 520 °C/O2 and 400 °C/N2 conditions.

Original languageEnglish (US)
Pages (from-to)580-583
Number of pages4
JournalMicroelectronic Engineering
Volume87
Issue number4
DOIs
StatePublished - Apr 1 2010

Keywords

  • Floating gate
  • Polysilazane-base inorganic
  • Shallow trench isolation
  • Spin-On-Dielectric

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Gate oxide wear out using novel polysilazane-base inorganic as nano-scaling shallow trench filling'. Together they form a unique fingerprint.

Cite this