Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, Husam N. Alshareef, C. Freeman, M. Christensen, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, J. J. Chambers

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Physics & Astronomy