Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, Husam N. Alshareef, C. Freeman, M. Christensen, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, J. J. Chambers

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Silicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al diffusion from the cladding to the TiN/HfO2interface during forming gas anneal together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with experimentally detected N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt.
Original languageEnglish (US)
Pages (from-to)153501
JournalApplied Physics Letters
Volume100
Issue number15
DOIs
StatePublished - Apr 9 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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