Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications

H. C. Wen*, S. C. Song, C. S. Park, C. Burham, G. Bersuker, K. Choi, M. A. Quevedo-Lopez, B. S. Ju, Husam Niman Alshareef, H. Niimi, H. B. Park, P. S. Lysaght, P. Majhi, B. H. Lee, R. Jamrny

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

27 Scopus citations

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Engineering & Materials Science