Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications

H. C. Wen*, S. C. Song, C. S. Park, C. Burham, G. Bersuker, K. Choi, M. A. Quevedo-Lopez, B. S. Ju, Husam Niman Alshareef, H. Niimi, H. B. Park, P. S. Lysaght, P. Majhi, B. H. Lee, R. Jamrny

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

24 Scopus citations

Abstract

The effective work function (EWF) of ternary metalaluminum-nitride (M-Al-N, M=Ta, Ti, Mo, W) metal gate electrodes in high-k dielectric gate stacks has been investigated. With the addition of Al, the EWF can be tuned toward p-type (∼5eV) by 250meV compared to the EWF of the binary metal nitride. Low threshold voltage (Vt) of ∼ -0.35V, an equivalent oxide thickness (EOT)∼1.2nm, and performance suitable for gate-first 32nm low standby power applications are demonstrated.

Original languageEnglish (US)
Article number4339766
Pages (from-to)160-161
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - Dec 1 2007
Event2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan
Duration: Jun 12 2007Jun 14 2007

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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