Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

Muhammad Mustafa Hussain, Casey Eben Smith, Harlan Rusty Harris, Chadwin Young, Hsinghuang Tseng, Rajarao Jammy

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.
Original languageEnglish (US)
Pages (from-to)626-631
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume57
Issue number3
DOIs
StatePublished - Mar 2010

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering'. Together they form a unique fingerprint.

Cite this