Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

A. Fontserè, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, M. Nafría

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Physics & Astronomy